1998. 10. 8
1/3
SEMICONDUCTOR
TECHNICAL DATA
BC556/7/8
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
For Complementary With NPN Type BC546/547/548.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
BC556
V
CBO
-80
V
BC557
-50
BC558
-30
Collector-Emitter
Voltage
BC556
V
CEO
-65
V
BC557
-45
BC558
-30
Emitter-Base
Voltage
BC556
V
EBO
-5
V
BC557
-5
BC558
-5
Collector Current
BC556
I
C
-100
mA
BC557
-100
BC558
-100
Emitter Current
BC556
I
E
100
mA
BC557
100
BC558
100
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1998. 10. 8
2/3
BC556/7/8
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
NOTE : According to the value of h
FE
the BC546, BC547, BC548 are classified as follows.
CLASSIFICATION
none
A
B
C
h
FE
BC556
110 450
110 220
200 450
-
BC557
110 800
110 220
200 450
420 800
BC558
110 800
110 220
200 450
420 800
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-30V, I
E
=0
-
-
-15
nA
DC Current Gain (Note)
BC556
h
FE
V
CE
=-5V, I
C
=-2mA
110
-
450
BC557
110
-
800
BC558
110
-
800
Collector-Emitter
Saturation Voltage
BC556
V
CE(sat)
I
C
=-100mA, I
B
=-5mA
-
-
-0.65
V
BC557
-
-
-0.65
BC558
-
-
-0.65
Base-Emitter
Saturation Voltage
BC556
V
BE(sat)
I
C
=-100mA, I
C
=-5mA
-
-0.9
-1.1
V
BC557
-
-0.9
-1.1
BC558
-
-0.9
-1.1
Base-Emitter Voltage
V
BE(ON)
1
V
CE
=-5V, I
C
=-2mA
-0.6
-
-0.75
V
V
BE(ON)
2
V
CE
=-5V, I
C
=-10mA
-
-
-0.8
V
Transition Frequency
f
T
V
CE
=-5V, I
C
=-10mA, f=100MHz
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz, I
E
=0
-
4.5
-
pF
Noise Figure
BC556
NF
V
CE
=-6V, I
C
=-0.1mA
R
g
=10k , f=1kHz
-
1.0
10
dB
BC557
-
1.0
10
BC558
-
1.0
10
1998. 10. 8
3/3
BC556/7/8
Revision No : 3
COLLECTOR CURRENT I (mA)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
10
DC CURRENT GAIN h
FE
-3
-1
-0.3
-0.1
COLLECTOR CURRENT I (mA)
C
h - I
f - I
C
COLLECTOR CURRENT I (mA)
-0.1
-0.3
-1
-3
T
TRANSITION FREQUENCY f (MHz)
10
BASE CURRENT I (
A)
B
-0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
-1
-2
-3
-4
-5
-6
-7
-40
-80
-120
-160
-200
-240
COMMON EMITTER
Ta=25 C
-2.0
-1.5
-1.0
-0.5
I =-0.2mA
B
0
FE
C
-10
-30
-100
-300
30
50
100
300
500
1k
COMMON EMITTER
Ta=100 C
Ta=25 C
Ta=-25 C
V =-5V
V =-1V
CE
CE
VOLTAGE V (V)
CE(sat)
-10
-3
-1
-0.3
-0.1
COLLECTOR CURRENT I (mA)
C
V - I
CE(sat)
C
COLLECTOR-EMITTER SATURATION
-10
-30
-100
-300
COMMON EMITTER
I /I =10
C B
Ta=100 C
Ta=25 C
Ta=-25 C
T
C
-10
-30
-100
-300
30
50
100
300
500
1k
3k
COMMON EMITTER
V =-5V
Ta=25 C
CE
B
BE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-3
-10
-30
-100
-300
-1k
COMMON
EMITTER
V =-6V
CE
Ta=100
C
Ta=25
C
Ta=-25
C
P (mW)
25
50
75
100
125
150
175
100
200
300
400
500
625
700
-30
-50
-100
-300
-500
-1k
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